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| GS8550XU New Product Vishay Semiconductors formerly General Semiconductor Small Signal Transistor (PNP) TO-226AA (TO-92) 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6) Features * PNP Silicon Epitaxial Planar Transistors for amplifier applications. Especially suitable for low power output stages such as portable radios in class-B push-pull operation. * Complementary to GS8050xU * The "x" in the part number can be B, C or D, depending on the current gain. Mechanical Data Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk - 5K per container, 20K per box E7/4K per Ammo mag., 20K per box max. 0.022 (0.55) 0.098 (2.5) Bottom View Dimensions in inches and (millimeters) Maximum Ratings & Thermal Characteristics Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation at Tamb = 25C Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range Ratings at 25C ambient temperature unless otherwise specified Symbol VCBO VCEO VEBO IC Ptot RJA Tj TS Value -40 -25 -6 -800 625 200 (1) (1) Unit V V V mA mW C/W C C 150 -55 to +150 Note: (1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case www..com Document Number 88194 10-May-02 www.vishay.com 1 GS8550XU Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (TJ = 25C unless otherwise noted) Parameter DC Current Gain Current Gain Group B C D hFE VCE = -1V, IC = -800mA Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter ON Voltage Output Capacitance Gain-Bandwidth Product V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) COB T IC = -2mA, IB = 0 IC = -100A, IE = 0 IE = -100A, IC = 0 VCB = -35V, IE = 0 VEB = -6V, IC = 0 IC = -800mA, IB = -80mA IC = -800mA, IB = -80mA VCE = -1V, IC = -10mA VCB = -10V, IE = 0 = 1 MHz VCE = -10V, IC = -50mA Symbol Test Condition VCE = -1V, IC = -5mA VCE = -1V, IC = -100mA Min 45 85 120 160 -- -25 -40 -6 -- -- -- -- -- -- -- Typ 135 -- -- -- 30 -- -- -- -- -- -0.51 -1.25 -0.66 15 100 Max -- 160 200 300 -- -- -- -- -100 -100 -- -- -1.0 -- -- V V V nA nA V V V pF MHz -- Unit www..com www.vishay.com 2 Document Number 88194 10-May-02 |
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